Shanghai Yichi Optoelectronic Technology Co., Ltd
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Large excitation area terahertz emitter terahertz photoconductive antenna terahertz antenna
Large excitation area terahertz emitter terahertz photoconductive antenna terahertz antenna
Product details

Product Introduction

efficiencyhighThe terahertz radiation source has a significant impact on a range of terahertz scientific and technological applications, with one important aspect being its wide bandwidth and high electric field strength. This usually relies on radiation sources with large excitation areas, which traditionally require high bias voltages (up to several hundred V) to excite and achieve THz electric field strengths of KV/cm. The large excitation area terahertz transmitter launched by Shanghai Yichi Optoelectronics is a high-efficiency photoconductive antenna with a large excitation surface and only requires a very low bias voltage.

productcharacteristic

√ Large excitation area

√ Low external bias voltage

√ No need for external cooling device

√ Super integrated packaging design

technical specifications

The Tera SED launched by Shanghai Yichi Optoelectronics is a high-efficiency terahertz photoconductive antenna based on LT GaAs. We offer two different versions of large excitation area photoconductive antennas: the 10mm * 10mm excitation area antenna is suitable for amplifying femtosecond laser systems (single pulse energy can be as high as 300uJ); The 3mm * 3mm version of the photoconductive antenna is suitable for oscillating femtosecond lasers.

The left figure is a schematic diagram of the principle of Tera SED stimulated radiation THz, and the right figure is the experimental test spectrum data (0.7nJ pump power, GaP crystal detection results)

Spectral peak value 1THz-1.5THz
Spectrum width (@ -10dB) ~2.5THz
Maximum optical excitation power density 8W/mm2
Maximum excitation power 650mW
Excitation wavelength 700-850nm
size 1 inch outer diameter
Terahertz pulse intensity Up to 5KV/cm
Bias voltage
10-30V
Bias voltage modulation frequency DC-100KHz
Duty cycle 5%-100%

Ability to radiate terahertz radiation


Bias voltage Vbias Duty cycle THz electric field strength
Tera-SED3
up to 10V CW 100V/cm (@10V)
10-20V 50% 200V/cm (@20V)
30V
10% 300V/cm
Tera-SED10
up to 5V CW 1000V/cm(@5V)
5-20V 50% 2000V/cm(@20V)
25V
5% 5000V/cm


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