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    China. Room 2404, Wanyin International Building, No. 100 Minxin Road, Qianjiang New City, Jianggan District, Hangzhou City, Zhejiang Province
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InGaAs indium gallium arsenide detector
InGaAs indium gallium arsenide detector
InGaAs indium gallium arsenide detector
InGaAs indium gallium arsenide detector

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Product details
InGaAs indium gallium arsenide detector

characteristic:

● High sensitivity up to1700nm

● Low dark current

The area of the activity zone can reach0.7 to 7mm ²


model

Effective area

Spectral response (A/W)

Dark current (nA) @ 5V

Capacitor (pF) @ 5V

Bandwidth (nm)

chip

encapsulation

Size (mm)

Area (mm ²)

@650 nm / @1550 nm

PC0.7-i

LCC6.1

1

0.7

0.05 / 0.95

2

70

900…1700

PC0.7-ix

LCC6.1

1

0.7

0.3 / 0.95

2

70

600…1700

PC0.7-ix

TO52S1

1

0.7

0.3 / 0.95

2

70

600…1700

PC7.1-i

TO5i

3

0.7

0.05 / 0.95

25

700

900…1700


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