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EOT photodetector，bandwidth<10GHzSmall size, internal voltage bias, direct current to2GHz
EOT silicon photodiode detector includesPINPhotodiode, utilizing photovoltaic effect to convert light power into current, bandwidth<10GHz.EOTPhotodetectoralso known asEOTsilicon photodetectorTheEOTPhotodiode detector、Near infrared silicon-based diode photodetector、silicon photodetector、Near infrared silicon photodetector、Silicon based photodetector、Silicon based diode photodetectorwait.
equalEOTThe silicon photodiode detector is connected to the oscilloscope terminal50When the resistance is Ω, the pulse width of the laser can be measured. When the EOT silicon photodiode detector is connected to the spectrum analyzer50When the resistance is Ω, the frequency response of the laser can be measured.
In EOT photodiode detectors,<10GHzThe photodetector comes with an internal bias power supply composed of long-life lithium batteries. Insert the coaxial cable into the photodetectorBNCOutput connector, can be connected to oscilloscope or spectrum analyzer50Ω is enough.
Bandwidth is a very important physical quantity, and if not specified, it generally refers to two. One is the working wavelength of the photodetector, commonly known as the working bandwidth, such as the working bandwidth600-1700nmAnother refers to the repetition frequency of the pulse signal when testing the pulse light signal, such as10GLight detector,20GLight detector,1GLight detectors, etc.
Rise of near-infrared silicon-based diode photodetectors/fall time300ps(Typical), impact degree0.47A/W@830nmThe power supply requires DC and bandwidth>2GHzDark current<0.1nANoise<0.01pW/√HzOutput connectorBNC.
The typical responsivity of silicon photodetectors including visible light and near-infrared is as follows:
EOTSpecification of photoelectric detector：
|
Product series |
ET-2060 |
ET-2060 |
ET-2060 |
ET-2070 |
ET-3000- |
ET-3010 |
|
Photoelectric detector model |
120-10011-0001 (ET-2030) |
120-10028-0001 (ET-2040) |
120-10133-0001 (ET-2060) |
120-10134-0001 (ET-2070) |
120-10034-0001 (ET-3000) |
120-10050-0001 (ET-3010)a |
|
Detector material |
Silicon |
InGaAs |
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|
Rise/fall time |
<300ps/<300ps |
<30ns/<30ns |
<320ps/<320ps |
3ns/3ns |
<175ps/<175ps |
<175ps/<175ps |
|
Responsiveness |
0.47A/W @830nm |
0.6A/W @830nm |
0.47A/ W@830nm |
0.56A/W @830nm |
0.9A/W @1300nm |
0.9A/W @1300nm |
|
Power requirements |
9VDC |
24VDC |
9VDC |
24VDC |
6VDC |
6VDC |
|
bandwidth |
>1.2GHz |
>25MHz |
>1.1GHz |
>118MHz |
>2GHz |
>2GHz |
|
Effective area diameter |
0.4mm |
4.57mm |
0.4mm |
2.55mm |
100μm |
100μm |
|
dark current |
<0.1nA |
<10nA |
<0.1nA |
<10nA |
<2.0nA |
<3.0nA |
|
Acceptance angle (1/2 angle) |
10° |
60° |
--- |
50° |
20⁰ |
--- |
|
Nep |
<0.01pW/√Hz |
0.09pW/√Hz |
<0.01pW/√Hz |
<0.10pW/√Hz |
<0.03pW/√Hz |
0.03pW/√Hz |
|
Maximum linear rated value |
Continuous current 3mA Pulse current: 3mA |
Continuous current: 2mA Optional input: 3mW |
Continuous current: 3mA Optional input: 3mA |
Continuous current: 2.5mA Pulse current: 15mA |
Continuous current 5mA |
Continuous current: 5mA |
|
Installation (threaded hole) |
8-32orM4 |
8-32orM4 |
8-32orM4 |
8-32orM4 |
8-32orM4 |
8-32orM4 |
|
Output Connector |
BNC |
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EOTCharacteristics of Silicon Photodetectors:
-Small footprint
-Internal voltage bias
-Bandwidth<10GHz
-DC to2 GHz
-Optional external wall plug-in power supply, fiber optic coupling, or free space options
EOTApplication of photodiode detector:
-Monitoring and AdjustmentQOutput of laser
-Monitor the output of the mode-locked laser
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